MAGX-001214-250L00-PROD Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC HEMT Pulsed Power Transistor

MAGX-001214-250L00
GaN on SiC HEMT Pulsed Power Transistor
250W Peak, 1200-1400 MHz, 300µs Pulse, 10% Duty
Features
 GaN depletion mode HEMT microwave transistor
 Internally matched
 Common source configuration
 Broadband Class AB operation
 RoHS Compliant
 +50V Typical Operation
 MTTF of 114 years (Channel Temperature < 200°C)
Applications
 L-Band pulsed radar
Product Description
The MAGX-001214-250L00 is a gold metalized
matched Gallium Nitride (GaN) on Silicon Carbide RF
power transistor optimized for pulsed L-Band radar
applications. Using state of the art wafer fabrication
processes, these high performance transistors provide
high gain, efficiency, bandwidth, ruggedness over a
wide bandwidth for today’s demanding application
needs. High breakdown voltages allow for reliable and
stable operation in extreme mismatched load conditions
unparalleled with older semiconductor technologies.
Production V1
18 Aug 11
Typical RF Performance at Pout = 250W Peak
Freq
Pin
(MHz)
(W)
1200
4.4
1250
4.0
1300
4.1
1350
4.4
1400
4.4
Gain
Slope
Id
(dB)
(dB)
(A)
17.6
-
8.0
18.0
-
8.2
17.8
-
8.7
17.5
-
9.1
17.6
0.5
9.0
Eff
Avg-Eff
RL
Droop
(%)
(%)
(dB)
(dB)
62.2
-
-13.3
0.4
60.4
-
-19.2
0.5
57.1
-
-22.6
0.6
54.6
-
-19.2
0.7
55.0
57.9
-19.8
0.6
Ordering Information
MAGX-001214-250L00 250W GaN Power Transistor
MAGX-001214-SB1PPR Evaluation Fixture
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology
Solutions is considering for development. Performance is based on target specifications, simu-
lated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
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