NPTB00050 Datasheet, PDF (3/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 50W RF Power Transistor

NPTB00050
Not recommended for new designs
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Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=450mA, T_A=25°C unless otherwise noted
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
(MHz)
2000
Z_S (W)
3.2 - j3.5
Z_L (W)
4.8 - j2.5
P_SAT (W)
50
Gain (dB)
15.0
Drain Efficiency @
P_SAT (%)
65
2400
3.1 - j7.5
5.0 - j3.5
50
13.8
62
2500
3.1 - j8.4
5.2 - j3.6
50
13.8
62
2600
3.2 - j9.4
5.3 - j3.7
50
13.5
61
2700
3.7 - j11.0
5.2 - j4.9
50
13.1
60
3000
4.4 - j13.0
5.2 - j5.3
50
13.0
60
Z_S is the source impedance
presented to the device.
Z_L is the load impedance
presented to the device.
Figure 1 - Optimal Impedances for CW Performance, V_DS = 28V, I_DQ = 450mA
NPTB00050
Page 3
NDS-007 Rev 6, April 2013