NPTB00050 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 50W RF Power Transistor

NPTB00050
Not recommended for new designs
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Gallium Nitride 28V, 50W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for broadband operation from
DC - 4000MHz
• 50W P_3dB CW narrowband power
• 25W P_3dB CW broadband power from
500-1000MHz
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to ECCN 3A982.a.1 export control
Broadband
50 Watt, 28 Volt
GaN HEMT
RF Specifications (CW): V_DS = 28V, I_DQ = 450mA, Frequency = 3000MHz, T_C = 25°C, Measured in Nitronex Test Fixture
Symbol Parameter
Min
Typ
Max
Units
P_3dB
P_1dB
G_SS
h
y
Average Output Power at 3dB Gain Compression
Average Output Power at 1dB Gain Compression
Small Signal Gain
Peak Drain Efficiency at P_OUT = P_3dB
Output mismatch stress, VSWR = 7:1, all phase
angles, P_OUT = P_1dB
45
50
-
W
33
38
-
W
10.5
11.5
-
dB
55
60
-
%
No Performance Degradation After Test
Typical OFDM Performance: V_DS = 28V, I_DQ = 300mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 2400 to 2600MHz. P_OUT,AVG = 6W, T_C=25°C.
Symbol Parameter
Typ
Units
G_P
h
EVM
Power Gain
Drain Efficiency
Error Vector Magnitude
12.0
dB
23
%
2.0
%
NPTB00050
Page 1
NDS-007 Rev 6, April 2013