NPT25100 Datasheet, PDF (3/13 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 125W RF Power Transistor

NPT25100
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance,
V_DS = 28V, I_DQ = 600mA
Frequency (MHz)
2140
2300
2400
2500
2600
2700
Z_S (W)
12.1 - j20.0
10.0 - j3.0
9.5 - j3.0
9.0 - j3.0
8.5 - j3.0
8.0 - j3.0
Z_L (W)
2.6 - j2.6
2.5 - j2.3
2.5 - j2.5
2.5 - j2.7
2.5 - j3.1
2.5 - j3.3
Z_S is the source impedance
presented to the device.
Z_L is the load impedance
presented to the device.
Figure 1 - Optimal Impedances for CW Performance, V_DS = 28V, I_DQ = 600mA
NPT25100
Page 3
NDS-001 Rev 6, April 2013