NPT25100 Datasheet, PDF (1/13 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 125W RF Power Transistor

NPT25100
Gallium Nitride 28V, 125W RF Power Transistor
Built using the SIGANTIC^® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, pulsed, WiMAX, W-CDMA, LTE
and other applications from 2100 – 2700MHz
• 125W P_3dB Peak envelope power
• 90W P_3dB CW power
• 10W linear power @ 2.0% EVM for single carrier
OFDM, 10.3dB peak/avg, 10MHz channel band-
width, 16.5dB gain, 26% efficiency
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to ECCN 3A982.a.1 export control
2100 – 2700 MHz
125 Watt, 28 Volt
GaN HEMT
RF Specifications (CW): V_DS = 28V, I_DQ = 600mA, Frequency = 2500MHz, T_C = 25°C, Measured in Nitronex Test Fixture
Symbol Parameter
Min
Typ
Max
Units
P_3dB
Average Output Power at 3dB Gain Compression
80
90
-
W
G_SS
Small Signal Gain
14
16.5
-
dB
h
Drain Efficiency at 3dB Gain Compression
55
62
-
%
Typical 2-Tone Performance: V_DS = 28V, I_DQ = 600mA, Frequency = 2500MHz, Tone spacing = 1MHz, T_C = 25°C
Measured in Load Pull System (Refer to Table 1 and Figure 1)
Symbol Parameter
Typ
Units
P_3dB,PEP Peak Envelope Power at 3dB Compression
125
W
P_1dB,PEP Peak Envelope Power at 1dB Compression
90
W
P_IMD3
Peak Envelope Power at -35dBm IMD3
80
W
Typical OFDM Performance: V_DS = 28V, I_DQ = 600mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 2500 to 2700MHz. P_OUT,AVG = 10W, T_C=25°C.
Symbol Parameter
Typ
Units
G_P
h
EVM
Power Gain
Drain Efficiency
Error Vector Magnitude
16.5
dB
26
%
2.0
%
NPT25100
Page 1
NDS-001 Rev 6, April 2013