MAGX-001214-500L00 Datasheet, PDF (3/8 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC Depletion-Mode Transistor Technology Internally Matched

MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Rev. V1
Electrical Specifications: T_A = 25 °C
Parameter
Test Conditions
Symbol Min. Typ.
RF FUNCTIONAL TESTS (V_DD = 50 V; I_DQ = 400 mA; 300 µs / 10%; 1200 - 1400 MHz)
Input Power
Power Gain
Drain Efficiency
P_OUT= 500 W Peak (50 W avg)
P_OUT= 500 W Peak (50 W avg)
P_OUT= 500 W Peak (50 W avg)
P_IN
-
6
G_P
17.5 19.2
η_D
50
56
Pulse Droop
P_OUT= 500 W Peak (50 W avg)
Droop
-
0.4
Load Mismatch Stability
P_OUT= 500 W Peak (50 W avg)
VSWR-S
-
3:1
Load Mismatch Tolerance
P_OUT= 500 W Peak (50 W avg)
VSWR-T
-
5:1
Max. Units
8.9 Wpk
-
dB
-
%
0.7
dB
-
-
-
-
Parameter
Test Conditions
Symbol Min. Typ. Max. Units
EXTENDED PULSE WIDTH CONDITIONS (V_DD = 42 V; I_DQ = 400 mA; 1.0 ms / 10%; 1200 - 1400 MHz)
TYPICAL RF DATA
Input Power
Power Gain
Drain Efficiency
P_OUT= 375 W Peak (37.5 W avg)
P_IN
P_OUT= 375 W Peak (37.5 W avg)
G_P
P_OUT= 375 W Peak (37.5 W avg)
η_D
-
5.3
-
Wpk
-
18.5
-
dB
-
55
-
%
Test Fixture Impedances
F (MHz)
1200
1250
1300
1350
1400
Z_IF (Ω)
1.2 - j1.2
1.2 - j0.9
1.3 - j0.6
1.4 - j0.3
1.6 + j0.0
Z_OF (Ω)
1.8 + j0.5
1.9 + j0.4
2.0 + j0.3
1.9 + j0.2
1.7 + j0.1
3
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