MAGX-001214-500L00 Datasheet, PDF (1/8 Pages) M/A-COM Technology Solutions, Inc. – GaN on SiC Depletion-Mode Transistor Technology Internally Matched

MAGX-001214-500L00
MAGX-001214-500L0S
GaN on SiC HEMT Pulsed Power Transistor
500W Peak, 1200-1400 MHz, 300 µs Pulse, 10% Duty
Features
 GaN on SiC Depletion-Mode Transistor Technology
 Internally Matched
 Common-Source Configuration
 Broadband Class AB Operation
 RoHS* Compliant and 260 °C Reflow Compatible
 +50 V Typical Operation
 MTTF of 5.3 * 10⁶ hours
Rev. V1
Applications
 L-Band pulsed radar
Description
The MAGX-001214-500L00 is a gold metalized matched
Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power
transistor optimized for pulsed L-Band radar applications.
Using state of the art wafer fabrication processes, these high
performance transistors provide high gain, efficiency,
bandwidth, and ruggedness over a wide bandwidth for
today’s demanding application needs. High breakdown
voltages allow for reliable and stable operation under more
extreme mismatch load conditions compared with older
semiconductor technologies.
MAGX-001214-500L00
MAGX-001214-500L0S
Typical RF Performance under standard operating conditions, P_OUT = 500W (Peak)
Freq.
P_IN
Gain
I_D
(MHz)
(W)
(dB)
(A)
Eff.
RL
Droop +1dB OD
(%)
(dB)
(dB)
(W)
1200
5.15
19.86
17.7
56.2
-12.7
0.29
568
1250
5.35
19.69
16.7
59.5
-10.3
0.30
561
1300
5.69
19.43
17.2
57.9
-10.9
0.33
554
1350
5.86
19.31
17.9
55.7
-15.3
0.36
547
1400
5.85
19.22
18.1
54.8
-17.5
0.38
549
Ordering Information
Part Number
Description
MAGX-001214-500L00 500 W GaN Power Transistor (Flanged)
MAGX-001214-500L0S 500 W GaN Power Transistor (Flangeless)
MAGX-001214-SB3PPR 1.2 - 1.4 GHz Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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