NPTB00004A_15 Datasheet, PDF (2/10 Pages) M/A-COM Technology Solutions, Inc. – DC-6 GHz HEMT

NPTB00004A
DC Specifications: T_C = 25°C
Symbol Parameter
Off Characteristics
I_DLK
Drain-Source Leakage Current
(V_GS=-8V, V_DS=100V)
I_GLK
Gate-Source Leakage Current
(V_GS=-8V, V_DS=0V)
On Characteristics
V_T
V_GSQ
R_ON
I_{D, MAX}
Gate Threshold Voltage
(V_DS=28V, I_D=2mA)
Gate Quiescent Voltage
(V_DS=28V, I_D=50mA)
On Resistance
(V_DS=2V, I_D=15mA)
Maximum Drain Current
(V_DS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
Min
Typ
Max
Units
-
-
2
mA
-
-
1
mA
-2.5
-1.6
-0.5
V
-2.1
-1.3
-0.3
V
-
1.6
-

-
1.4
-
A
Thermal Resistance Specification:
Symbol Parameter
Typ
Units
R_JC
Thermal Resistance (Junction-to-Case),
T_J = 180 °C
15
°C/W
Junction Temperature (T_J) measured using IR Microscopy, Case Temperature (T_C) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings: Not simultaneous, T_C = 25°C unless otherwise noted
Symbol Parameter
V_DS
V_GS
I_G
P_T
T_STG
T_J
HBM
MSL
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Moisture sensitivity level (per IPC/JEDEC J-STD-020)
Max
Units
100
V
-10 to 3
V
4
mA
11.6
W
-65 to 150
°C
200
°C
Class 1A
MSL-3
Page 2
NDS-036 Rev. 2, 011414