NPTB00004A_15 Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – DC-6 GHz HEMT

NPTB00004A
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
Built using the SIGANTIC^® process - A proprietary GaN-on-Silicon technology
Features
 Broadband operation from DC-6 GHz
 28V Operation
 Industry Standard Plastic Package
 High Drain Efficiency (>55%)
 Drop in Replacement for NPTB00004
Applications
 Broadband General Purpose
 Defense Communications
 Land Mobile Radio
 Wireless Infrastructure
 ISM Applications
 VHF/UHF/L-Band Radar
DC-6 GHz
5W
GaN HEMT
Product Description
The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 5W
(37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below
3GHz, the NPTB00004A is a drop in replacement for the NPTB00004.
RF Specifications (CW, 2.5 GHz): V_DS = 28V, I_DQ = 50mA, T_C= 25°C
Symbol Parameter
Min
G_SS
Small-signal Gain
-
P_SAT
Saturated Output Power
-
_SAT
Efficiency at Saturated Output Power
G_P
Gain at P_OUT = 4W

Drain Efficiency at P_OUT = 4W
-
12.8
45
V_DS
Drain Voltage
-

Ruggedness: Output Mismatch, all phase angles
Typ
Max
16
-
Units
dB
37.1
-
dBm
63.7
-
%
14.8
-
dB
57
-
%
28
-
V
VSWR = 15:1, No Device Damage
Page 1
NDS-036 Rev. 2, 011414