NPT2018_15 Datasheet, PDF (2/5 Pages) M/A-COM Technology Solutions, Inc. – DC-6 GHz HEMT

NPT2018
Preliminary
DC Specifications: T_C = 25°C
Symbol Parameter
Off Characteristics
I_DLK
Drain-Source Leakage Current
(V_GS=-8V, V_DS=160V)
I_GLK
Gate-Source Leakage Current
(V_GS=-8V, V_DS=0V)
On Characteristics
V_T
V_GSQ
R_ON
I_{D, MAX}
Gate Threshold Voltage
(V_DS=48V, I_D=3mA)
Gate Quiescent Voltage
(V_DS=48V, I_D=75mA)
On Resistance
(V_DS=2V, I_D=22mA)
Maximum Drain Current
(V_DS=7V pulsed, 300µS pulse width,
0.2% Duty Cycle)
Min
Typ
-
-
-
-
-2.5
-1.5
-2.1
-1.2
-
1.6
-
1.75
Max
3
1.5
Units
mA
mA
-0.5
V
-0.3
V
-

-
A
Thermal Resistance Specification:
Symbol Parameter
Typ
Units
R_JC
Thermal Resistance (Junction-to-Case),
T_J = 200 °C
6.5
°C/W
Junction Temperature (T_J) measured using IR Microscopy, Case Temperature (T_C) measured using a thermocouple embedded in
heatsink.
Absolute Maximum Ratings: Not simultaneous, T_C = 25°C unless otherwise noted
Symbol Parameter
V_DS
V_GS
I_G
P_T
T_STG
T_J
HBM
MSL
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Power Dissipation (Derated above 25°C)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Moisture sensitivity level (per IPC/JEDEC J-STD-020)
Max
Units
160
V
-10 to 3
V
6
mA
26.9
W
-65 to 150
°C
200
°C
Class 1A
TBD
Preliminary Datasheet
Page 2
NDS-042 Rev. 2, 020314