NPT2018_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – DC-6 GHz HEMT

NPT2018
Preliminary
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Built using the SIGANTIC^® process - A proprietary GaN-on-Silicon technology
Features
 Suitable for linear and saturated applications
 Tunable from DC-6 GHz
 48V Operation
 Industry Standard Plastic Package
 High Drain Efficiency (>60%)
Applications
 Defense Communications
 Land Mobile Radio
 Avionics
 Wireless Infrastructure
 ISM Applications
 VHF/UHF/L/S-Band Radar
DC-6 GHz
12.5W
GaN HEMT
Product Description
The NPT2018 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to
12.5W (41 dBm) in an industry standard surface mount plastic package.
RF Specifications (CW, 2.5 GHz): V_DS = 48V, I_DQ = 75mA, T_C= 25°C
Symbol Parameter
Min
G_SS
Small-signal Gain
-
P_SAT
Saturated Output Power
-
_SAT
Efficiency at Saturated Output Power
-
G_P
Gain at P_OUT = 12.5W
-

Drain Efficiency at P_OUT = 12.5W
-
V_DS
Drain Voltage
-

Ruggedness: Output Mismatch, all phase angles
Typ
Max
Units
17.5
-
dB
41.8
-
dBm
60
-
%
16.5
-
dB
55
-
%
48
-
V
VSWR = 10:1, No Device Damage
Preliminary Datasheet
Page 1
NDS-042 Rev. 2, 020314