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MSS30-XXX-X Datasheet, PDF (2/5 Pages) M/A-COM Technology Solutions, Inc. – Low Barrier Silicon Schottky Diodes
MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Packaged
Electrical Specifications: TA = 25°C
Model
Configuration
MSS30-046-P55 Single Junction
VF
Typ.
V
0.29
VBR
Min.
V
2
CJ
Typ. / Max.
pF
0.23 / 0.30
MSS30-046-P86 Single Junction 0.29
2
0.27 / 0.33
MSS30-050-P55 Single Junction 0.27
2
0.28 / 0.35
MSS30-050-P86 Single Junction 0.27
2
0.32 / 0.38
MSS30-142-E25 Single Junction 0.29
2
0.20 / 0.26
MSS30-142-H20 Single Junction 0.29
2
0.25 / 0.31
MSS30-148-E25 Single Junction 0.27
2
0.25 / 0.31
MSS30-148-H20 Single Junction 0.27
2
0.30 / 0.36
MSS30-154-E25 Single Junction 0.25
2
0.35 / 0.41
MSS30-154-H20 Single Junction 0.25
2
0.40 / 0.46
MSS30-242-E35 Series Tee
0.29
2
0.15 / 0.21
MSS30-242-H30 Series Tee
0.29
2
0.25 / 0.31
MSS30-248-E35 Series Tee
0.27
2
0.25 / 0.31
MSS30-248-H30 Series Tee
0.27
2
0.30 / 0.36
MSS30-254-E35 Series Tee
0.25
2
0.35 / 0.41
MSS30-254-H30 Series Tee
0.25
2
0.40 / 0.46
MSS30-442-E45 Ring Quad
0.29
2
0.15 / 0.21
MSS30-448-E45 Ring Quad
0.27
2
0.20 / 0.26
MSS30-454-E45 Ring Quad
0.25
2
0.25 / 0.31
MSS30-454-H40
Test Conditions
Ring Quad
0.25
IF = 1 mA
2
0.25 / 0.31
IR = 10 µA
VR = 0 V
F = 1 MHz
RS
Typ.
Ω
10
10
6
6
13
13
7
7
3
3
13
13
7
7
3
3
13
7
3
3
RD
Max.
Ω
18
18
15
15
22
22
15
15
12
12
22
22
15
15
12
12
22
15
12
12
I = 5 mA
Rev. V1
FCO
Typ.
GHz
160
160
175
175
175
175
190
190
240
240
175
175
190
190
240
240
175
190
240
240
Outline
P55
P86
P55
P86
E25
H20
E25
H20
E25
H20
E35
H30
E35
H30
E35
H30
E45
E45
E45
H40
Absolute Maximum Ratings
Parameters
Rating
Reverse Voltage
Forward Current
Power Dissipation
Operating Temperature
Rated VBR
50 mA
100 mW, per junction @ TA = 25°C,
derate linearly to 0 @ TA = +150°C
-65°C to +150°C
Storage Temperature
-65°C to +150°C
Soldering Temperature (packaged)
+230°C for 5 seconds
Beam Lead Pull Strength
2
4 G minimum
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