MSS30-XXX-X Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Low Barrier Silicon Schottky Diodes

MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Features
 V_F, R_D and C_J Matching Options
 Chip, Beam Lead and Packaged Devices
 Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS30-xxx-x Series of Schottky diodes are
fabricated on N-Type epitaxial substrates using
proprietary processes that yield the highest FCOs in
the industry. Optimum mixer performance is
obtained with LO power of -3 dBm to +3 dBm per
diode.
Rev. V1
Chip
Electrical Specifications: T_A = 25°C
Model
Configuration
MSS30-046-C15 Single Junction
V_F
Typ.
V
0.29
V_BR
Min.
V
2
C_J
Typ. / Max.
pF
0.10 / 0.12
MSS30-050-C15
Test Conditions
Single Junction
0.27
I_F = 1 mA
2
0.15 / 0.18
I_R = 10 µA
V_R = 0 V
F = 1 MHz
R_S
Typ.
Ω
10
6
R_D
Max.
Ω
18
15
I = 5 mA
F_CO
Typ.
GHz
160
175
Outline
C15
C15
Beam Lead
Electrical Specifications: T_A = 25°C
Model
Configuration
MSS30-142-B10B Single Junction
V_F
Typ.
V
0.29
V_BR
Min.
V
2
C_J
Typ. / Max.
pF
0.07 / 0.10
MSS30-148-B10B Single Junction 0.27
2
0.12 / 0.15
MSS30-154-B10B Single Junction 0.25
2
0.22 / 0.25
MSS30-242-B20 Series Tee
0.29
2
0.07 / 0.10
MSS30-248-B20 Series Tee
0.27
2
0.12 / 0.15
MSS30-254-B20 Series Tee
0.25
2
0.22 / 0.25
MSS30-442-B41 Ring Quad
0.29
2
0.07 / 0.10
MSS30-448-B41 Ring Quad
0.27
2
0.12 / 0.15
MSS30-454-B40
Test Conditions
Ring Quad
0.25
I_F = 1 mA
2
0.22 / 0.25
I_R = 10 µA
V_R = 0 V
F = 1 MHz
R_S
Typ.
Ω
13
7
3
13
7
3
13
7
3
R_D
Max.
Ω
22
15
12
22
15
12
22
15
12
I = 5 mA
F_CO
Typ.
GHz
175
190
240
175
190
240
175
190
240
Outline
B10B
B10B
B10B
B20
B20
B20
B41
B41
B40
1
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