MA4VAT2000-1277T_15 Datasheet, PDF (2/5 Pages) M/A-COM Technology Solutions, Inc. – HMIC PIN Diode Variable Attenuator

MA4VAT2000-1277T
HMIC PIN Diode Variable Attenuator
1.70 - 2.20 GHz
Electrical Specifications @ +25 °C
Parameter
No DC Bias Low Loss State
Insertion Loss
Input Return Loss
Output Return Loss
P1dB
IIP3
Control Voltage
DC Bias RF Attenuation State
Maximum Attenuation
Input Return Loss @ Max Attenuation
Output Return Loss @ Max Attenuation
IIP3
Control Voltage @ Max Attenuation
Frequency Band
1.70 GHz – 2.20 GHz
1.70 GHz – 2.20 GHz
Unit
dB
dB
dB
dBm
dBm
V
dB
dB
dB
dBm
V
Rev. V3
Min
Typ
Max
-
1.2
1.4
11
16
-
11
16
-
30
33
-
37
40
-
-
0V @ 0uA
-
23
25
-
17
20
-
17
20
-
15
21
-
-
1.50V @ 260uA
-
Typical RF Performance Over Industry Designated RF Frequency Bands ^3,4
Band
DCS
RX
TX
Freq
(MHz)
1710-1785
1805-1880
I. Loss
(dB)
1.2
1.2
Att.
R. Loss
IIP3
(dB)
(dB)
(dBm)
23
13
40
23
13
40
Phase
-Relative-
(Degree)
-20º
PCS
RX
1850-1910
1.2
23
13
40
-20º
TX
1930-1990
1.4
23
13
40
UMTS
RX
1920-1980
1.4
23
11
40
-25º
WCDMA/CDMA
TX
2110-2170
1.5
23
11
40
TD-S-CDMA
-
2010-2025
1.4
23
11
40
-25º
SCDMA
-
1800-2200
1.8
23
11
40
-25º
3. All are typical values only.
4. Relative phase is the measured Insertion Phase Difference between Insertion Loss and the 20dB Attenuation State.
(Please refer to the plots below)
2
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