MA4VAT2000-1277T_15 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – HMIC PIN Diode Variable Attenuator

MA4VAT2000-1277T
HMIC PIN Diode Variable Attenuator
1.70 - 2.20 GHz
Features
 RoHs and ELV compliant
 Bandwidth: 1.70 GHz to 2.20 GHz
 1.2 dB Insertion Loss, Typical
 1.4:1 VSWR, Typical
 24 dB Attenuation, Typical
 40 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )
 0-1.5 Volt Control Voltage.
 User can add an External Resistor for higher
D.C. Voltage requirements.
MLP 3mm Package
(Circuit Side View)
Rev. V3
Extra Features
 Usable Bandwidth: 1.20 GHz to 2.50 GHz
 1.5 dB Insertion Loss, Max
 2:1 VSWR, Max
 23 dB Attenuation, Max
Description and Applications
M/A-COM’s MA4VAT2000-1277T is a HMIC PIN
Diode Variable Attenuator which utilizes an integrated 90
degree 3dB hybrid with a pair of Silicon PIN Diodes
to perform the required attenuation function as
Voltage (Current) is applied. This device operates
from 0 to 1.5 Volts at 260 uA typical control current
for maximum attenuation. The user can add external
biasing resistors to the bias ports for higher voltage
requirements as required.
M/A-COM’s MA4VAT2000-1277T PIN Diode
Variable Attenuator is designed for AGC Circuit
Applications requiring:
 Lower Insertion Loss
 Lower distortion through attenuation
 Larger dynamic range for wide spread
spectrum applications
PIN 1
PIN 16
PIN Configuration
PIN
Function
PIN
Function
1
GND
9
DC2
2
GND
10
GND
3
GND
11
GND
4
GND
12
DC1
5
GND
13
GND
6
RF2
14
GND
7
GND
15
RF1
8
GND
16
GND
Center Paddle is RF and D.C. Ground
RF Input/Output Ports are Functionally Symmetrical
Absolute Maximum Ratings^1,2
Parameter
Maximum Ratings
Operating Temperature
-40 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
RF C.W. Incident Power
+33 dBm C.W.
Reversed Current @ -30 V
l -50nA l
Control Current
50mA per Diode
1. All the above are at Room Temperature except as noted
2. Exceeding the above Limits may cause permanent damage
1
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