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MA4EXXXX Datasheet, PDF (2/7 Pages) M/A-COM Technology Solutions, Inc. – Low Series Resistance
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MA4EXXXX Series
GaAs Flip Chip
Schottky Barrier Diodes
Rev. V9
Electrical Specifications @ +25°C
Parameters and Test Conditions
Symbol Units
Junction Capacitance at 0 V at 1 MHz
Cj
pF
Total Capacitance at 0 V at 1 MHz1
Ct
pF
Junction Capacitance Difference
Series Resistance at +10 mA2
DCj
pF
Rs
Ohms
Forward Voltage at +1 mA
Vf1
Volts
Forward Voltage Difference at +1 mA
DVf
Volts
Reverse Breakdown Voltage at -10 µA Vbr
Volts
SSB Noise Figure
NF
dB
MA4E1317
Min.
Typ.
Max.
-
.020
-
.030
.045
.060
-
-
-
-
4
7
.60
.70
.80
-
-
-
4.5
7
-
-
6.54
-
MA4E1318
Min.
-
.0303
Typ.
.0203
.0453
Max.
-
.0603
-
.005
.010
-
4
7
.60
.70
.80
-
.005
.010
-
-
-
-
6.54
-
Parameters and Test Conditions
Symbol Units
Junction Capacitance at 0 V at 1 MHz
Cj
pF
Total Capacitance at 0 V at 1 MHz1
Ct
pF
Junction Capacitance Difference
DCj
pF
Series Resistance at +10 mA2
Rs
Ohms
Forward Voltage at +1 mA
Vf1
Volts
Forward Voltage Difference at +1 mA
DVf
Volts
Reverse Breakdown Voltage at -10 µA Vbr
Volts
SSB Noise Figure
NF
dB
MA4E1319-1 or -2
Min.
-
.0303
Typ.
.0203
.0453
Max.
-
.0603
-
.005
.010
-
4
7
.60
.70
.80
-
.005
.010
4.5
7
-
-
6.54
-
MA4E2160
Min.
-
.0603
Typ.
-
.0303
Max.
.0203
.0453
.010
-
.005
7
-
4
.80
.60
.70
.010
-
.005
-
4.5
7
-
-
6.54
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode.
4. Measured at a LO frequency of 9.375 GHz, with an IF frequency of 300 MHz, LO drive level is +6 dBm for a single Schottky junction. The
IF noise figure contribution (1.5 dB) is included.
2
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