MA4AGBLP912 Datasheet, PDF (2/4 Pages) Tyco Electronics – AlGaAs Beam Lead PIN Diode

MA4AGBLP912
AlGaAs
Beamlead PIN Diode
RoHS Compliant
Rev. V2
Electrical Specifications at T_AMB = 25°C
Test Conditions
Total Capacitance @ –5V/10 GHz ¹
Forward Resistance @ +20mA/10 GHz ²
Forward Voltage at +10mA
Leakage Current at –40 V
Minority Carrier Lifetime
Paramters
Ct
Rs
Vf
Ir
TL
Units
fF
Ohms
Volts
nA
nS
Min Typical Max.
–
26
30
–
4
4.9
1.2
1.36
1.5
–
50
300
–
5
10
Notes:
1. Capacitance is determined by measuring the isolation of a single series diode in a 50Ω line at 10GHz.
2. Forward series resistance is determined by measuring the insertion loss of a single series diode in a 50Ω line at
10GHz.
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
0.009
0.013
0.2286 0.3302
B
0.0049 0.0089 0.1245 0.2261
C
0.0037 0.0057 0.0940 0.1448
D
0.0049 0.0089 0.1245 0.2261
E
0.002
0.006
0.0508 0.1524
F
0.0218 0.0278 0.5537 0.70612
2
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