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MA4AGBLP912 Datasheet, PDF (1/4 Pages) Tyco Electronics – AlGaAs Beam Lead PIN Diode
MA4AGBLP912
AlGaAs
Beamlead PIN Diode
RoHS Compliant
Rev. V2
Features
♦ Low Series Resistance
♦ Low Capacitance
♦ Millimeter Wave Switching & Cutoff Frequency
♦ 5 Nanosecond Switching Speed
♦ Can be Driven by a Buffered +5V TTL
♦ Silicon Nitride Passivation
♦ Polyimide Scratch Protection
♦ RoHS Compliant
MA4AGBLP912
Description
M/A-COM's MA4AGBLP912 is an Aluminum-Gallium-
Arsenide anode enhanced, beam lead PIN diode.
AlGaAs anodes, which utilize M/A-COM’s patent
pending hetero-junction technology, produce less diode
“On” resistance than conventional GaAs devices. These
devices are fabricated on a OMCVD epitaxial wafer
using a process designed for high device uniformity and
extremely low parasitics. The diodes exhibit low series
resistance, 4Ω, low capacitance, 28fF, and an extremely
fast switching speed of 5nS. They are fully passivated
with silicon nitride and have an additional layer of a
polymer for scratch protection. The protective coating
prevents damage to the junction and the anode air
bridges during handling and assembly.
Applications
The ultra low capacitance of the MA4AGBLP912 device
makes it ideally suited for use through W-band. The low
RC product and low profile of the beamlead PIN diode
allows for use in microwave and millimeter wave switch
designs, where low insertion loss and high isolation are
required. The operating bias conditions of +10mA for the
low loss state, and 0v, for the isolation state permits the
use of a simple +5V TTL gate driver. These AlGaAs,
beamlead diodes, can be used in switching arrays on
radar systems, high speed ECM circuits, optical
switching networks, instrumentation, and other wideband
multi-throw switch assemblies.
Absolute Maximum Ratings @ TAMB = 25°C
(unless otherwise specified)
Parameter
Reverse Voltage
Operating Temperature
Absolute Maximum
-50V
-65°C to +125°C
Storage Temperature
-65°C to +150°C
Junction Temperature
+175°C
Forward DC Current
40mA
C.W. Incident Power
+23dBm
Mounting Temperature +235°C for 10 seconds
1
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
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Visit www.macomtech.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.