MLP7130-0805-2 Datasheet, PDF (1/5 Pages) M/A-COM Technology Solutions, Inc. – Silicon Limiter PIN Diode

MLP7130-0805-2
Silicon Limiter PIN Diode
Features
 Tightly Controlled I-Layer Thickness
 Low Series Resistance: 1.7 Ω @ I_F = 10 mA
 Low Thermal Resistance: 150°C/W
 RoHS* Compliant
Description
The MLP7130-0805-2 silicon limiter PIN diode is a
packaged device with a 2 µm (nominal) I layer
thickness. It is manufactured using a proven diode
manufacturing process for high reliability and
uniformity.
The very low thermal resistance (<150ºC/W ) of this
device enables it to reliably handle large RF power
levels up to 33 dBm CW and RF peak incident power
levels up to 47 dBm (1 µs pulse width, 0.1% duty
cycle) at T_A = 25ºC. The I layer thickness of the
diode is tightly controlled to produce consistent input
1 dB compression points in limiter circuits. The low
series resistance and total capacitance of the diode
combine to produce excellent isolation and insertion
loss.
The MLP7130-0805-2 limiter PIN diode is designed
for use in moderate-power receiver protection circuit
applications. It is suitable for use in the UHF bands
and higher for incident peak power levels up to 47
dBm peak. It is durable and capable of reliably
operating in military, commercial, and industrial
environments.
Rev. V1
0805-2
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These electronic devices are sensitive to
electrostatic discharge (ESD) and can be damaged
by static electricity. Proper ESD control techniques
should be used when handling these HBM Class 0
devices.
Moisture Sensitivity
These electronic devices are rated MSL 1.
Environmental Capabilities
Capable of meeting the environmental requirements
of MIL-STD-750 and MIL-STD-883.
Ordering Information
Part Number
Package
MLP7130-0805-2
400 piece waffle pack
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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