MA4SPS502_15 Datasheet, PDF (1/4 Pages) M/A-COM Technology Solutions, Inc. – SURMOUNT PIN Diode

MA4SPS502
SURMOUNT^TM PIN Diode
Rev. V2
Features
 Surface Mount Device
 No Wire Bonding Required
 Rugged Silicon-Glass Construction
 Silicon Nitride Passivation
 Polymer Scratch Protection
 Low Parasitic Capacitance and Inductance
 Higher Average and Peak Power Handling
 RoHS* Compliant and 260°C Reflow Compatible
Case Style Outline Drawing ODS-1270^1,2
Description and Applications
This device is a silicon-glass PIN diode chip fabri-
cated with M/A-COM Technology Solutions patented
HMIC^TM process. This device features two silicon
pedestals embedded in a low loss glass. The diode is
formed on the top of one pedestal and connections to
the backside of the device are facilitated by making
the pedestal sidewalls conductive. Selective back-
side metalization is applied producing a surface
mount device. The topside is fully encapsulated with
silicon nitride and has an additional polymer layer for
scratch protection. These protective coatings prevent
damage to the junction and the anode air-bridge
during handling and assembly.
These packageless devices are suitable for usage in
moderate incident power (10 W C.W.) or higher
incident peak power (500 W) series, shunt, or series-
shunt switches. Small parasitic inductance, 0.35 nH,
and an excellent RC time constant, 0.22 pS, make
these devices ideal for switch applications where
higher P_1dB and IP3 values are required. These
diodes can also be used in p, T, tapered resistance,
and switched-pad attenuator control circuits for 50W
or 75W systems.
Ordering Information
Tape and Reel
Gel Pack (100 pieces)
Pocket Tape (3000 pieces)
MA4SPS502
MADP-000502-12700P
1. Backside metal: 0.1 µM thick.
2. Hatched areas indicate backside ohmic gold contacts.
INCHES
MM
DIM
Min. Max. Min. Max.
A 0.058 0.062 1.47 1.57
B 0.026 0.030 0.66 0.76
C 0.004 0.006 0.10 0.15
D 0.020 0.022 0.51 0.56
E 0.013 0.015 0.33 0.38
Absolute Maximum Ratings @ T_AMB = 25°C
Parameter
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Dissipated Power
( RF & DC )
Absolute Maximum
600mA
| -275 V |
-65°C to +125°C
-55 °C to +150°C
+175°C
3W
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
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is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
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Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
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changes to the product(s) or information contained herein without notice.