MA4PBL027 Datasheet, PDF (1/5 Pages) Tyco Electronics – HMICTM Silicon Beam-Lead PIN Diodes

MA4PBL027
HMIC^TM Silicon Beam-Lead PIN Diodes
Rev. V1
Features
• Beam-Lead Device
• No Wirebonds Required
• Rugged Silicon-Glass Construction
• Silicon Nitride Passivation
• Polymer Scratch and Impact Protection
• Low Parasitic Capacitance and Inductance
• Ultra Low Capacitance < 40 fF
• Excellent RC Product < 0.10 pS
• High Switching Cutoff Frequency > 110 GHz
• 110 Nanosecond Minority Carrier Lifetime
• Driven by Standard +5V TTL PIN Diode Driver
Description
This device is a Silicon-Glass Beam-Lead PIN diode fabricated
with M/A-COM’s patented HMIC^TM process. This device
features one silicon pedestal embedded in a low loss, low
dispersion glass which supports the beam-leads. The diode is
formed on the top of the pedestal, and airbridges connect the
diode to the beam-leads. The topside is fully encapsulated with
silicon nitride and has an additional polymer layer for scratch
and impact protection. These protective coatings prevent
damage to the junction and the air-bridges during handling and
assembly.
The diodes themselves exhibit low series resistance, low
capacitance, and extremely fast switching speed.
Applications
The ultra low capacitance of this device allows use through W-
band (110 GHz) applications. The low RC product and low
profile of the PIN diodes makes it ideal for use in microwave
and millimeter wave switch designs, where lower insertion loss
and higher isolation are required. The + 10 mA ( low loss state )
and the 0v ( isolation state ) bias of the diodes allows the use a
simple + 5V TTL gate driver. These diodes are used as
switching arrays on radar systems, high-speed ECM circuits,
optical switching networks, instrumentation, and other wideband
multi-throw switch assemblies.
Absolute Maximum Ratings¹
@ TA = +25°C ( Unless otherwise specified )
Parameter
Absolute Maximum
Forward Current
100 mA
Reverse Voltage
90 V
Operating Temperature
-55 °C to +125 °C
Storage Temperature
-55 °C to +150 °C
Junction Temperature
+ 175 °C
RF C.W. Incident Power
30 dBm C.W.
RF & DC Dissipated Power
150 mW
Mounting Temperature
+235°C for 10
seconds
1. Exceeding these limits may cause permanent damage.
Case Style ODS-1302
Cathode
A
F
D
B
E
C
side
top
1
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Solutions is considering for development. Performance is based on target specifications,
simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications
are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be
available. Commitment to produce in volume is not guaranteed.
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