MA4P7464F-1072T_1 Datasheet, PDF (1/6 Pages) M/A-COM Technology Solutions, Inc. – Non Magnetic SMQ MELF PIN Diode

MA4P7464F-1072T
Non Magnetic SMQ MELF PIN Diode
Features
♦ Non-Magnetic Package Suitable for MRI
Applications
♦ Rectangular MELF SMQ Ceramic Package
♦ Hermetically Sealed
♦ Low Rs for Low Series Loss
♦ Long τ_L for Lower Intermodulation Distortion
♦ Low C_j for High Series Isolation
♦ High Average Incident Power Handling
♦ RoHS Compliant
Description
The MA4P7464F-1072T is a surface mountable
PIN diode in a non-magnetic, Metal Electrode
Leadless Faced (MELF) package. The device
incorporates M/A-COM Technology Solutions
time proven HIPAX technology to produce a low
inductance ceramic package with no ribbons or
whisker wires. Incorporated in the package is a
hard glass passivated, CERMACHIP™ PIN chip
that is full face bonded on both the cathode and
anode to maximize surface area for the lowest
electrical and thermal resistance. The package
utilizes a non-magnetic plating process that
provides for a package with extremely low
permeability. The MA4P7464F-1072T has been
comprehensively characterized both electrically
and mechanically to ensure repeatable and
predictable performance. The non-magnetic
MA4P7464F-1072T is the electrical equivalent of
its magnetic counterpart the MA4P7004F-1072T.
Applications
This diode is well suited for use in low loss, low
distortion, high power switching circuits and can
be used in high magnetic field environments at HF
through UHF frequencies. The low thermal
resistance of this device provides excellent
performance at high RF power incident levels, up
to 100 watts CW. This device is designed to meet
the most demanding electrical and mechanical
MRI environments.
V2
Designed for Automated Assembly
These SMQ PIN diodes are designed for high
volume tape and reel assembly. The rectangular
package design provides for highly efficient
automatic pick and place assembly techniques. The
parallel flat surfaces are suitable for key jaw or
vacuum pickup. All solderable surfaces are tin plated
and compatible with reflow and vapor phase
soldering methods.
Absolute Maximum Ratings¹ @ 25°C
Parameter
Absolute Maximum
Operating Temperature
-65 °C to +125°C
Storage Temperature
-65 °C to +150°C
Diode Junction Temperature +175 °C Continuous
Diode Mounting Temperature +265°C for 10 seconds
RF C.W. Incident Power
+ 50 dBm C.W.
Forward D.C. Current
+ 250 mA
Reverse D.C. Voltage @ -10uA
l - 400 V l
1. Exceeding these limits may cause permanent damage.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under
development. Performance is based on engineering tests. Specifications are typical. Mechanical
outline has been fixed. Engineering samples and/or test data may be available. Commitment to
produce in volume is not guaranteed.
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information contained herein without notice.