MA4E2508 Datasheet, PDF (1/4 Pages) Tyco Electronics – SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

MA4E2508 Series
SURMOUNT^TM Low, Medium, & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
Features
• Extremely Low Parasitic Capitance & Induc-
tance
• Surface Mountable in Microwave Circuits, No
Wirebonds Required
• Rugged HMIC Construction with polyimide
Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
Barrier, 100 % Stabilization Bake (300°C, 16
hours)
• Lower Susceptibility to ESD Damage
Case Style 1112
A
M/A-COM Products
Rev. V3
B
Description
The MA4E2508 SURMOUNT^TM Anti-Parallel Diode
Series are Silicon Low, Medium, & High Barrier
Schottky Devices fabricated with the patented Het-
erolithic Microwave Integrated Circuit (HMIC) proc-
ess. HMIC circuits consist of Silicon pedestals
which form diodes or via conductors embedded in
a glass dielectric, which acts as the low dispersion,
low loss, microstrip transmission medium. The
combination of silicon and glass allows HMIC de-
vices to have excellent loss and power dissipation
characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior me-
chanical performance of a chip. The SurMount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic dis-
charge than conventional beam lead Schottky di-
odes.
D
E
C
D
Case Style 1112
DIM
A
B
C
D Sq.
E
INCHES
MIN.
MAX.
0.0445
0.0465
0.0169
0.0189
0.0040
0.0080
0.0128
0.0148
0.0128
0.0148
MILLIMETERS
MIN.
MAX.
1.130
1.180
0.430
0.480
0.102
0.203
0.325
0.375
0.325
0.375
Equivalent Circuit
The multi-layer metalization employed in the fabri-
cation of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all de-
vices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
The “0502” outline allows for Surface Mount place-
ment and multi- functional polarity orientations.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
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