MA4AGP907 Datasheet, PDF (1/6 Pages) Tyco Electronics – AlGaAs Flip-Chip PIN Diode

MA4AGP907
MA4AGFCP910
AlGaAs
Flip Chip PIN Diodes
RoHS Compliant
Rev. V4
Features
♦ Low Series Resistance
♦ Ultra Low Capacitance
♦ Millimeter Wave Switching & Cutoff Frequency
♦ 2 Nanosecond Switching Speed
♦ Can be Driven by a Buffered TTL
♦ Silicon Nitride Passivation
♦ Polyimide Scratch Protection
♦ RoHS Compliant
Chip Dimensions
MA4AGP907 and MA4AGFCP910
Description
M/A-COM's MA4AGP907 and MA4AGFCP910 are
Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN
diodes. These devices are fabricated on OMCVD
epitaxial wafers using a process designed for high
device uniformity and extremely low parasitics. The
diodes exhibit an extremely low RC product, (0.1ps)
and 2-3nS switching characteristics. They are fully
passivated with silicon nitride and have an added
polymer layer for scratch protection. The protective
coating prevents damage to the junction and the
anode air-bridge during handling and assembly.
Applications
The ultra low capacitance of the MA4AGP907 and
MA4AGFCP910 allows their use through millimeter
frequencies for RF switches and switched phase
shifter applications. The diodes are designed for use
in pulsed or CW applications, where single digit nS
switching speed is required. For surface mount
assembly, the low capacitance of these switches
make them ideal for use in microwave multi-throw
switch assemblies, where the series capacitance of
each “off” port adversely loads the input and affects
VSWR.
Notes:
1. Gold Pads 14µM thick.
2. Yellow areas indicate ohmic gold mounting pads.
3. Dimensions A thru F are identical for both devices
INCHES
MM
DIM
MIN.
MAX.
MIN.
MAX.
A
0.026
0.027
0.6604 0.6858
Absolute Maximum Ratings T_AMB = +25°C
(unless otherwise specified)
B
0.0135 0.0145 0.3429 0.3683
C
0.0065 0.0075 0.1651 0.1905
Parameter
Reverse Voltage
Operating Temperature
Absolute Maximum
MA4AGP907 -50V
MA4AGFCP910 -75V
-55°C to +125°C
D
0.0043 0.0053 0.1092 0.1346
E
0.0068 0.0073 0.1727 0.1854
F
0.0182 0.0192 0.4623 0.4877
Storage Temperature
-55°C to +150°C
Junction Temperature
+175°C
Dissipated Power
( RF & DC )
50mW
C.W. Incident Power
+23 dBm
Mounting Temperature +280°C for 10 seconds
1
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