BAS521 Datasheet, PDF (3/4 Pages) NXP Semiconductors – High voltage switching diode

BAS521
GRAPHICAL DATA
handboo⁵k,⁰h⁰alfpage
IF
(mA)
400
MHC618
300
200
100
(1) (2) (3)
0
0
0.5
1
1.5
VF (V)
(1) T_amb = 150 °C.
(2) T_amb = 75 °C.
(3) T_amb =25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
10²
handbook, halfpage
IR
(µA)
10
MHC619
1
10^−1
10^−2
0
40
80
120
160
200
Tj (°C)
V_R = V_Rmax; typical values.
Fig.3 Reverse current as a function of junction
temperature.
300
handbook, halfpage
IF
(mA)
200
MHC620
0.42
handbook, halfpage
Cd
(pF)
0.38
MHC621
100
0.34
0
0
50
100
150
200
Tamb (°C)
0.3
0
10
20
30
40
VR (V)
Fig.4 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
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