BAS521 Datasheet, PDF (2/4 Pages) NXP Semiconductors – High voltage switching diode

BAS521
ELECTRICAL CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_BR
breakdown voltage
V_F
forward voltage
I_R
reverse current
t_rr
reverse recovery time
C_d
diode capacitance
CONDITIONS
I_R = 100 µA
I_F = 100 mA; note 1
V_R = 250 V
V_R = 250 V; T_a = 150 °C
when switched from I_F = 30 mA to
I_R = 30 mA; R_L = 100 Ω; measured at
I_R = 3 mA
V_R = 0 V; f = 1 MHz
Note
1. Pulse test: t_p = 300 µs; δ = 0.02.
MIN.
300
−
−
−
−
TYP.
340
0.95
30
40
16
MAX.
−
1.1
150
100
50
UNIT
V
V
nA
µA
ns
−
0.4
5
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
R_{th j-a}
thermal resistance from junction to solder point
thermal resistance from junction to ambient
Notes
1. Soldering point of the cathode tab.
2. Refer to SOD523 (SC-79) standard mounting conditions.
CONDITIONS
note 1
note 2
VALUE
120
500
UNIT
K/W
K/W
http://www.luguang.cn
Email:[e-mail]