BAS85 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier diode

BAS85
Silicon Schottky Barrier Diode
Characteristics (T_j = 25_C unless otherwise specified)
200
180 V_R = 30 V
160
140
120
100
R_thJA=
540K/W
P_R–Limit
@100%V_R
80
60
P_R–Limit
@80%V_R
40
20
0
25
50
75 100 125 150
15822
T_j – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
10
T_j = 150°C
T_j = 25°C
1
0.1
0
15824
0.5
1.0
1.5
V_F – Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
1000
V_R = V_RRM
100
10
1
25
15823
50
75 100 125 150
T_j – Junction Temperature ( °C )
Figure 2. Reverse Current vs. Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
0.1
15825
f=1MHz
1.0
10.0
V_R – Reverse Voltage ( V )
100.0
Figure 4. Diode Capacitance vs. Reverse Voltage
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