BAS85 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

BAS85
Silicon Schottky Barrier Diode
MINI MELF
Features
— For general applications
— Low turn-on voltage
— PN junction guard ring
Mechanical Data
— Glass case
— Weight: 0.05g (approx)
Maximum Ratings and Electrical Characteristics
Rating at 25^oCambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Characteristic
Continuous reverse voltage
Forward continuous current*
Peak forward current*
Surge forward current*
@ tp = 1s
Power dissipation*
@ T_A = 65°C
Junction temperature
Operating temperature range
Storage temperature range
Symbol
V_R
I_F
I_FM
I_FSM
P_tot
T_j
T_A
T_STG
Dimension in millimeters
Value
Unit
30
V
200
mA
300
mA
600
mA
200
mW
125
°C
-65 to +125
°C
-65 to +150
°C
Electrical Characteristics ^{@ T}j ^{= 25°C unless otherwise specified}
Characteristic
Reverse breakdown voltage
10 mA pulses
Symbol
Min
Typ
V_(BR)R
30
—
Max
—
Unit
V
* Valid provided that electrodes are kept at ambient temperature.
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