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| BAS56 Datasheet, PDF (2/4 Pages) NXP Semiconductors – High-speed double diode | |||
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BAS56
High-speed Double Diode
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Characteristic
Reverse Leakage Current
Forward voltage
Symbol
IR
VF
Min
MAX UNIT Test Condition
100 nA VR=60V
-
100 μA VR=60V,Tj=150â
100 nA VR=120V
100 μA VR=120V,Tj=150â
-
1V
IF=200mA
Diode Capacitance
CD
-
2.5
pF VR=0V,f=1.0MHz
Reverse Recovery Time
trr
Forward recovery voltage
Vfr
IF=IR=400mA,
-
6
ns RL=100â¦
Irr=0.1*IR
2.0
-
1.5
IF=400mA,tr=30ns
IF=400mA,tr=100ns
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
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