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BAS56 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed double diode
BAS56
High-speed Double Diode
Features
z High switching speed.
z Continuous reverse voltage.
z Repetitive peak reverse voltage.
z Pepetitive peak forward current.
Pb
Lead-free
Applications
z High speed switching in e.g. surface mounted circuits.
Ordering Information
Type No.
BAS56
Marking
L51
Package Code
SOT-143
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
60
V
Repetitive Peak Reverse Voltage
series connection
VRRM
120
V
Continous Rcverse Voltage
VR
60
V
Continous Rcverse Voltage
series connection
VR
120
V
Continuous Forward Current
Single diode loaded(Note1)
IF
200
mA
Double diode loaded(Note1)
150
Repetitive peak forward current
Single diode loaded
IFSM
600
mA
Double diode loaded
430
Non-repatitive peak forward current
Square wave,Tj=25℃ prior to surge
t=1us
IFSM
9
A
t=100us
3
t=10ms
1.7
Total Power Dissipation
Pd
250
mW
Storage and Junction Temperature Range
TSTG Tj
-65 to +150
℃
Note:1.Device mounted on an FR4 printed-circuit board.