L1N60A Datasheet, PDF (4/9 Pages) Leshan Radio Company – N-CHANNEL MOSFET

LESHAN RADIO COMPANY, LTD.
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
L1N60A
Test Condictions
V_DD=300 V, I_D= 0.4A,
R_G=4.7Ω, V_GS=10V
(see Figure 19)
Min. Typ. Max. Unit
5.5
ns
5
ns
13
ns
28
ns
Table 7. Source drain diode
Symbol
Parameter
Test Condictions
I_SD Source-drain Current
I_SDM(1) Source-drain Current (pulsed)
V_SD(2) Forward on Voltage
I_SD=0.8A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD=0.8A,
di/dt = 100A/µs,
V_DD=20V, Tj=25°C
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD=0.8A,
di/dt = 100A/µs,
V_DD=20V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
0.8 A
2.4 A
1.6 V
135
ns
216
nC
3.2
A
140
ns
224
nC
3.2
A
Table 8. Gate-source zener diode
Symbol
Parameter
Test Condictions
Min. Typ. Max. Unit
BV_GSO(1)
Gate-source Braekdown
Voltage
Igs=±1mA (Open Drain) 30
V
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