L1N60A Datasheet, PDF (2/9 Pages) Leshan Radio Company – N-CHANNEL MOSFET

LESHAN RADIO COMPANY, LTD.
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM(1)
P_TOT
Drain-Source Voltage (V_GS = 0)
Drain-Gate Voltage (R_GS = 20KΩ)
Gate-Source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C=100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt⁽²⁾ Peak Diode Recovery voltage slope
T_J
Operating Junction Temperature
T_stg
Storage Temperature
1. Pulse width limited by safe operating area
2. I_SD ≤0.3A, di/dt ≤200A/µs, V_DD =80%V_(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
R_thj-case
R_thj-a
R_thj-lead
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
Maximum lead temperature for soldering
purpose
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
Table 3. Avalanche data
Symbol
Parameter
Avalanche Curent, Repetitive or Noy-Repetitive
I_AR
(pulse width limited by Tj Max)
Single pulse avalanche Energy
E_AS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
TO-92
600
600
± 30
0.3
0.189
1.2
3
0.25
800
4.5
-55 to 150
Value
TO-92
--
120
40
260
Value
0.8
60
L1N60A
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Unit
°C/W
°C/W
°C/W
°C
Unit
A
mJ
2/9