MMBT6517LT1 Datasheet, PDF (3/5 Pages) Motorola, Inc – High Voltage Transistor

LESHAN RADIO COMPANY, LTD.
MMBT6517LT1
200
V CE = 10 V
100
70
50
30
20
T J = 125°C
25°C
–55°C
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100
70
50
T J = 25°C
30
V CE = 20 V
f = 20 MHz
20
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 2. Current–Gain — Bandwidth Product
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
T J = 25°C
V BE(sat) @ I C /I B = 10
V BE(on) @ V CE = 10 V
V CE(sat) @ I C /I B = 10
2.0 3.0 5.0 7.0 10
V CE(sat) @ I C /I B = 5.0
20 30 50 70 100
2.5
IC
2.0
= 10
IB
1.5
1.0
25°C to 125°C
0.5
0
–0.5
R θVC for V CE(sat)
–55°C to 25°C
–1.0
–1.5
–2.0
R θVC for V BE
–55°C to 125°C
–2.5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
I C , COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
100
70
50
T J = 25°C
C eb
30
20
10
7.0
5.0
C cb
3.0
2.0
1.0
0.2
0.5 1.0 2.0
5.0 10 20
50 100 200
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
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