MMBT6517LT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – High Voltage Transistor

LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
NPN Silicon
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V _CBO
Emitter–Base Voltage
V _EBO
Base Current
I_B
Collector Current — Continuous I _C
Value
350
350
5.0
250
500
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
MMBT6517LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 1.0 mAdc )
Collector–Base Breakdown Voltage
(I _C = 100 µAdc )
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc )
Collector Cutoff Current
( V _CB = 250Vdc )
Emitter Cutoff Current
( V _EB = 5.0Vdc )
V _(BR)CEO
V _(BR)CBO
V _(BR)EBO
I _CBO
I _EBO
350
350
6.0
—
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
50
nAdc
M23–1/5