LO4459PT1G Datasheet, PDF (3/4 Pages) Leshan Radio Company – Channel Enhancement Mode Field Effect Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
LESHAN RADIO COMPANY, LTD.
40
35
-10V
-8V
-5V
30
25
-4.5V
20
-4V
15
V_GS=-3.5V
10
5
10
V_DS=-5V
8
6
4
2
125°C
25°C
-40°C
0
0
1
2
3
4
5
-V_DS (Volts)
Figure 1: On-Region Characteristics
0
0
1
2
3
4
5
-V_GS(Volts)
Figure 2: Transfer Characteristics
100
1.6
V_GS=-10V
I_D=-6.5A
80
1.4
V_GS=-4.5V
V_GS=-4.5V
1.2
I_D=-5A
60
V_GS=-10V
40
20
0
2
4
I_F6=-6.5A, d₈I/dt=100₁A₀/ µs
-I_D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0
0.8
0.6
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
160
1E+01
140
I_D=-6.5A
1E+00
120
1E-01
125°C
100
1E-02
THIS
80
PRODUCT
HAS
BEEN
125°C
DESIGNED AND
QUAL2IF5I°ECD
FOR
THE
CONSU1MEE-0R3MARKET.
APPLICATIONS
OR
USES
AS
CRITICAL
COOUMT POOFNS46EU00NCTHSAINP-P4L0LIF°ICEASTUIOPNPSOROTRDUESVEICSEOSFOITRSSPYRSOTDEUMCSTASR. EANOOSTRAEUSTEHR1OEV-RE0SI4ZETHDE. AROIGSHDTOTEO2S5IN°MCOPTRAOSVSEUPMREOAD-NU4YC0°TLCIDAEBSILIIGTNY,ARISING
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
1E-05
20
2
4
6
8
10
1E-06
-V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V_SD (Volts)
Figure 6: Body-Diode Characteristics
Rev .O 3/4