LO4459PT1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – Channel Enhancement Mode Field Effect Transistor

LESHAN RADIO COMPANY, LTD.
LO4459PT1G
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The LO4459PT1G uses advanced trench technology to provide
excellent R_DS(ON) with low gate charge. This device is suitable
for use as a load switch or in PWM applications.
LO4459PT1G is a Green Product ordering option.
.
V_DS (V) = -30V
I_D = -6.5A
R_DS(ON) < 46mΩ (V_GS = -10V)
R_DS(ON) < 72mΩ (V_GS = -4.5V)
SOP-8
Top View
S
D
S
D
S
D
G
D
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-6.5
-5.3
-30
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
Typ
R_θJA
33
62
R_θJL
18
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev .O 1/4