LNTS4409NWT1G_15 Datasheet, PDF (3/5 Pages) Leshan Radio Company – Small Signal MOSFET

3.2
8V
4.5 V
2.4
1.6
LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G , S-LNTS4409NWT1G
TYPICAL PERFORMANCE CURVES (T_J = 25°C unless otherwise noted)
T_J = 25°C
3.2
V_DS ≥ 10 V
3V
2.5 V
2.4
V_GS = 2 V
1.6
0.8
V_GS = 1.5 V
0
0
0.5
1
1.5
2
2.5
3
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.8
0
0
25°C
T_J = 125°C
T_J = −55°C
0.8
1.6
2.4
3.2
4
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.8
V_GS = 4.5 V
0.8
V_GS = 2.5 V
0.6
T_J = 125°C
0.4
T_J = 25°C
0.2
T_J = −55°C
0
0
0.8
1.6
2.4
3.2
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.6
T_J = 125°C
0.4
T_J = 25°C
0.2
T_J = −55°C
0
0
0.8
1.6
2.4
3.2
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
I_D = 0.75 A
1.8
1.6
1.4
1.2
1
0.8
100
V_GS = 2.5 V
80
60
V_GS = 4.5 V
40
20
0.6
0
−50 −25 0 25 50 75 100 125 150
0
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
T_J = 25°C
V_GS = 0 V
C_iss
C_oss
C_rss
5
10
15
20
25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
Rev .A 3/5