LNTS4409NWT1G_15 Datasheet, PDF (2/5 Pages) Leshan Radio Company – Small Signal MOSFET

LESHAN RADIO COMPANY, LTD.
LNTS4409NWT1G , S-LNTS4409NWT1G
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V_(BR)DSS
V_GS = 0 V, I_D = 250 mA
25
Drain−to−Source Breakdown Voltage V_(BR)DSS/T_J
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
I_DSS
I_GSS
V_GS = 0 V,
V_DS = 20 V
T_J = 25°C
T_J = 70°C
T_J = 125°C
V_DS = 0 V, V_GS = 8.0 V
Gate Threshold Voltage
V_GS(TH)
V_GS = V_DS, I_D = 250 mA
0.5
Negative Threshold Temperature
Coefficient
V_GS(TH)/T_J
Drain−to−Source On Resistance
R_DS(on)
Forward Transconductance
g_FS
CHARGES AND CAPACITANCES
V_GS = 4.5 V, I_D = 0.6 A
V_GS = 2.7 V, I_D = 0.2 A
V_GS = 4.5 V, I_D = 1.2 A
V_DS = 5.0 V, I_D = 0.5 A
Input Capacitance
C_ISS
Output Capacitance
C_OSS
Reverse Transfer Capacitance
C_RSS
Total Gate Charge
Q_G(TOT)
Threshold Gate Charge
Q_G(TH)
Gate−to−Source Charge
Q_GS
Gate−to−Drain Charge
Q_GD
SWITCHING CHARACTERISTICS (Note 3)
V_GS = 0 V, f = 1.0 MHz,
V_DS = 10 V
V_GS = 4.5 V, V_DS = 15 V,
I_D = 0.8 A
Turn−On Delay Time
t_d(ON)
Rise Time
t_r
Turn−Off Delay Time
t_d(OFF)
Fall Time
t_f
DRAIN−SOURCE DIODE CHARACTERISTICS
V_GS = 4.5 V, V_DS = 15 V,
I_D = 0.7 A, R_G = 51 W
Forward Diode Voltage
V_SD
V_GS = 0 V,
T_J = 25°C
I_S = 0.6 A
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Typ
30
−2.0
249
299
260
0.5
49
22.4
8.0
1.2
0.2
0.28
0.3
5.0
8.2
23
41
0.82
Max
Unit
V
mV/°C
0.5
mA
2.0
5.0
3
uA
1.5
V
mV/°C
350
mW
400
S
60
pF
30
12
1.5
nC
0.50
0.40
12
ns
8.0
35
60
1.20
V
Rev .A 2/5