BAS516 Datasheet, PDF (3/3 Pages) NXP Semiconductors – High-speed diode

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BAS516
(1) I = 1 mA.
R
Input signal: reverse pulse rise time t _r = 0.6 ns; reverse voltage pulse duration t _p = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time t _r = 0.35 ns.
Fig.6 Reverse recovery voltage test circuit and waveforms.
Input signal: forward pulse rise time t _r = 20 ns; forward current pulse duration t _p ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.7 Forward recovery voltage test circuit and waveforms.
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