BAS516 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diode

LESHAN RADIO COMPANY, LTD.
High-speed diode
FEATURES
· Ultra small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage: max. 75 V
· Repetitive peak reverse voltage: max. 85 V
· Repetitive peak forward current: max. 500 mA.
APPLICATIONS
· High-speed switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS516 is a high-speed
switching diode fabricated in
planar technology, and
encapsulated in the SOD523
(SC79) SMD plastic package.
1
CATHODE
2
ANODE
BAS516
1
2
SOD523 SC-79
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V RRM repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current T s =90°C; note 1; see Fig.1
I FRM
repetitive peak forward current
I FSM
non-repetitivepeakforwardcurrent square wave; T j =25°C prior to
surge; see Fig.3
t =1µs
t =1 ms
t =1 s
P tot
total power dissipation
T s =90°C; note 1
T stg
storage temperature
Tj
junction temperature
Note
1. Ts is the temperature at the soldering point of the cathode tab.
MIN.
–
–
–
–
–
–
–
–
-65
–
ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
VF
forward voltage
IR
reverse current
Cd
diode capacitance
t rr reverse recovery time
V fr forward recovery voltage
THERMAL CHARACTERISTICS
see Fig.2 I F = 1 mA
I F = 10 mA
I F =50 mA
I F = 150 mA
see Fig.4 V R = 25 V
V R =75 V
V R = 25 V; T j = 150 °C
V R = 75 V; T j = 150 °C;
f = 1 MHz; V R = 0; see Fig.5
when switched from I F =10mA to I R = 10mA;
R L = 100 Ω; measured at I R = 1 mA; see Fig.6
when switched from IF = 10 mA; tr = 20 ns; see Fig.7
SYMBOL
PARAMETER
CONDITIONS
R th j-s
thermal resistance from junction to soldering point
Note 1. Soldering point of the cathode tab.
note 1
MAX.
85
75
250
500
UNIT
V
V
mA
mA
4
A
1
A
0.5
A
500 mW
+150 °C
150
°C
MAX.
715
855
1
1.25
30
1
30
50
1
4
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
1.75
V
VALUE UNIT
120 K/W
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