MMVL109T1 Datasheet, PDF (2/2 Pages) Leshan Radio Company – Silicon Epicap Diode

LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMVL109T1
40
1000
36
32
28
24
20
100
16
12
f = 1.0 MHz
8
TA = 25°C
4
0
1
3
10
30
VR, REVERSE VOLTAGE (VOLTS)
10
100
10
Figure 1. DIODE CAPACITANCE
VR = 3 Vdc
TA = 25°C
100
1000
f, FREQUENCY (MHz)
Figure 2. FIGURE OF MERIT
100
60
20
10
6.0
2.0
VR = 20 Vdc
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
0.002
0.001
–60 –40 –20 0 +20 +40 +60 +80 +100 +120 +140
TA, AMBIENT TEMPERATURE
Figure 3. LEAKAGE CURRENT
1.04
1.03
1.02
VR = 3.0 Vdc
[^{f = 1.0 MHz}
Ct Cc + Cj
1.01
1.00
0.99
0.98
0.97
0.96
–75
–50 –25 0 +25 +50 +75 +100 +125
TA, AMBIENT TEMPERATURE
Figure 4. DIODE CAPACITANCE
NOTES ON TESTING AND SPECIFICATIONS
1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc.
MMVL109T1–2/2