MMVL109T1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Epicap Diode

LESHAN RADIO COMPANY, LTD.
Silicon Epicap Diode
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechnaical tuning
methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Surface Mount Package
• Device Marking: 4A
Device
MMVL109T1
ORDERING INFORMATION
Package
Shipping
SOD–323
3000 / Tape & Reel
MMVL109T1
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
2
PLASTIC, CASE 477
SOD– 323
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR
Continuous Reverse Voltage
IF
Peak Forward Current
THERMAL CHARACTERISTICS
30
Vdc
200
mAdc
Symbol
Characteristic
Max
Unit
PD
Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
RθJA
Thermal Resistance Junction to Ambient
TJ, Tstg Junction and Storage Temperature Range
*FR–5 Minimum Pad
200
1.57
635
-55 to +150
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse BreakdownVoltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc)
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
TCC
30
—
—
—
—
300
Max
—
Unit
Vdc
0.1
µAdc
— ppm/°C
Ct, Diode Capacitance
Q, Figure of Merit
VR = 3.0 Vdc, f = 1.0 MHz
VR = 3.0 Vdc
pF
f = 50 MHz
Device
Min
Nom
Max
Min
MMVL109T1
26
29
32
200
1. C_R is the ratio of C_t measured at 3 Vdc divided by C_t measured at 25 Vdc.
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz(Note 1)
Min
Max
5.0
6.5
MMVL109T1–1/2