MMBV809LT1 Datasheet, PDF (2/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
M M B V 8 0 9 LT 1
10
9
8
7
6
5
4
3
2
1
0
0.5 1
2 3 45
8 10 15
V_R, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000
V_R = 3 Vdc
T_A = 25°C
100
10
0.1
1.0
10
f, FREQUENCY (GHz)
Figure 2. Figure of Merit
1000
V_R = 3.0 Vdc
f = 1.0 MHz
800
600
400
0
0.2
0.4
0.6
0.8
1.0
f, FREQUENCY (GHz)
Figure 3. Series Resistance
1.04
1.03
V_R = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
1.2
-75 -50 -25
0 +25 +50 +75 +100 +125
T_A, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
MMBV809LT1–2/2