MMBV809LT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed for 900 MHz frequency control
and tuning applications. It provides solid–state reliability in
replacement of mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
• Available in 8 mm Tape and Reel
1
ANODE
(
3
CATHODE
MMBV809LT1
4.5-6.1 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation⁽¹⁾ @T _A = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V_R
I_F
P_D
T_J
T _stg
Value
20
20
225
1.8
+125
–55 to +125
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic-All Types
Symbol
Min
Reverse Breakdown Voltage
(I_R=10µAdc)
Reverse Voltage Leakage Current
(V_R=15Vdc)
V _(BR)R
20
I_R
—
Max
—
50
Unit
Vdc
nAdc
C_TDiode Capacitance
V_R=2.0Vdc,f=1.0MHz
pF
Q,Figure of Merit
V_R=3.0Vdc
f=500MHz
C_R,Capacitance Ratio
C₂/C₈
f=1.0MHz(2)
Device Type
Min
Typ
Max
Typ
MMBV809LT1
4.5
5.3
6.1
75
1. FR-5 Board 1.0 x 0.75 x 0.62 in.
2. C_R is the ratio of C_t measured at 2.0 Vdc divided by C_t measured at 8.0 vdc
Min
Max
1.8
2.6
MMBV809LT1–1/2