MMBV105GLT1 Datasheet, PDF (2/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
M M B V 1 0 5 G LT 1
20
18
16
14
12
10
8.0
6.0
f = 1.0MHz
4.0
TA = 25°C
2.0
0
0.3 0.5
1.0
2.0
3.0 5.0 10
20 30
V _R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000
V _R =3Vdc
T_A = 25°C
100
10
10
100
1000
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
1.04
1.03
V _R= 3.0Vdc
f = 1.0MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75 –50 –25
0
+25 +50 +75 +100 +125
T _A , AMBIENT TEMPERATURE (°C)
Figure 3. Diode Capacitance
MMBV105GLT–2/2