MMBV105GLT1 Datasheet, PDF (1/2 Pages) Leshan Radio Company – Silicon Tuning Diode

LESHAN RADIO COMPANY, LTD.
Silicon Tuning Diode
This device is designed in the surface Mount package for
general frequency control and tuning applications.It provides
solid-state reliability in replacement of mechanical
tuning methods.
• Controlled and Uniform Tuning Ration
3
CATHODE
1
ANODE
MMBV105GLT1
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Value
Reverse Voltage
Forward Current
Device Dissipation @T _A = 25°C
Derate above 25°C
V_R
30
I_F
200
P_D
225
1.8
Junction Temperature
Storage Temperature Range
DEVICE MARKING
T_J
+125
T _stg
–55 to +150
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
( I _R=10µAdc)
Reverse Voltage Leakage Current
( V_R =28Vdc)
V _(BR)R
I_R
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
Min
30
—
Max
—
50
Unit
Vdc
nAdc
Device Type
MMBV105GLT1
C
T
V_R=25Vdc,f =1.0MHz
pF
Min
Max
1.5
2.8
Q
V =3.0Vdc
R
f=50MHz
Typ
250
C
R
C /C
3 25
f=1.0MHz
Min
Max
4.0
6.5
MMBV105GLT–1/2