MMBT2484LT1 Datasheet, PDF (2/4 Pages) Motorola, Inc – Low Noise Transistor

LESHAN RADIO COMPANY, LTD.
MMBT2484LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
ON CHARACTERISTICS
DC Current Gain
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
(I C = 10 mAdc, V CE = 5.0Vdc)
Collector–Emitter Saturation Voltage
(I C = 1.0 mAdc, I B = 1.0 mAdc)
Base–Emitter On Voltage
(I C = 1.0 mAdc, I CE = 5.0 mAdc)
hFE
VCE(sat)
V BE(on)
250
––
––
800
––
0.35
––
0.95
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
C obo
––
6.0
Input Capacitance
(V EB=0.5 Vdc, I C = 0 , f = 1.0 MHz)
C ibo
––
6.0
Noise Finure
NF
––
3.0
(V CE=5.0 Vdc, I C = 10 µAdc , R S =10 kΩ, f = 1.0 MHz, BW =200 Hz)
Unit
––
Vdc
Vdc
pF
pF
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
O7–2/4