MMBT2484LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Low Noise Transistor

LESHAN RADIO COMPANY, LTD.
Low Noise Transistor
NPN Silicon
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
2
EMITTER
Value
60
60
6.0
50
Unit
Vdc
Vdc
Vdc
mAdc
MMBT2484LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT2484LT1 = 1U
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V (BR)CEO
60
(I C = 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
V (BR)CBO
60
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
V (BR)EBO
5.0
(I E = 10 µAdc, I C = 0)
Collector Cutoff Current( V CB = 45Vdc, I E = 0)
I CBO
—
( V CB = 45Vdc, I E = 0, T A=150 °C)
—
Emitter Cutoff Current
I EBO
—
( V EB =5.0 Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
10
nAdc
10
µAdc
10
nAdc
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