MMBD352WT1 Datasheet, PDF (2/2 Pages) ON Semiconductor – Dual Shottky Barrier Diode

LESHAN RADIO COMPANY, LTD.
TYPICAL CHARACTERISTICS
MMBD352WT1
100
1.0
TA = 85°C
0.9
10
TA = –40°C
0.8
1.0
TA = 25°C
0.7
0.1
0.6
0.3
0.4
0.5
0.6
0.7
0.8
0
1.0
2.0
3.0
4.0
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Capacitance
MMBD352WT1–2/2