MMBD352WT1 Datasheet, PDF (1/2 Pages) ON Semiconductor – Dual Shottky Barrier Diode

LESHAN RADIO COMPANY, LTD.
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are
suitable also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA
MMBD352WT1
3
1
2
CASE 419–02 , STYLE 9
SOT–323 / SC – 70
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage VR
7.0
VCC
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board⁽¹⁾
PD
TA = 25°C
Derate above 25°
200
mW
1.6
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
Total Device Dissipation
PD
Alumina Substrate⁽²⁾ TA = 25°C
Derate above 25°C
625
°C/W
300
mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RθJA
TJ, Tstg
417
°C/W
–55 to +150 °C
MMBD352WT1 = M5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 7.0 V)
Capacitance
VF
—
IR
—
—
C
—
(VR = 0 V, f = 1.0 MHz)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
1
ANODE
2
CATHODE
3
CATHODE/ANODE
Max
Unit
0.60
V
µA
0.25
10
1.0
pF
MMBD352WT1–1/2